Fluorinated CMOSFETs fabricated on (100) and (111) Si substrates

By introducing appropriate amounts of F into the gate SiO/sub 2/, the transconductance and channel mobility for both n- and p-channel MOSFETs made on either (100) or (111) Si substrate are improved, due to the reduced densities of interface traps and oxide charge. These results, coupled with its improved reliability against hot-carrier damage, make fluorinated oxide an attractive VLSI technology.<
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