Sidegating characteristics as a function of distance and dose for implanted and metallic sidegates on proton-isolated GaAs

Sidegating characteristics have been measured on MESFETs as a function of sidegate distances ranging from 3 to 570 mu m and proton isolation doses ranging from 0 to 5*10/sup 14/ atoms/cm/sup 2/. In addition, the composition of the sidegate is shown to be a significant factor in modulating saturated transistor current.<
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