An investigation of a molybdenum gate for submicrometer CMOS

Processing issues including Mo deposition, gate etching, ion implant channeling, and integration of a Mo gate with high-temperature processing are discussed. Methods for addressing these issues are described. A 0.8- mu n Mo-gate CMOS process incorporating these methods has been developed. Submicrometer Mo-gate NMOS and PMOS devices and 0.8- mu m CMOS ring oscillator results are presented. The high performance of these devices and circuits demonstrates the potential of a Mo gate.<
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