Monolithic integration of an amplifier and a phase modulator fabricated in a GRINSCH-SQW structure by placing the junction below the quantum well

We present results of a novel semiconductor optical amplifier device in which an amplifier and a phase modulator are integrated into a fundamental transverse-mode ridge waveguide. By placing the p-n junction below the quantum well (QW) during epitaxial growth and utilizing the effect of the electric field on the depletion width, the phase of the light from an integrated optical amplifier-modulator is varied. For a modulation reverse bias voltage range of 0.4 V, we have demonstrated a 360 degrees /mm phase shift with less than 1.2 dB of amplitude modulation.<
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