Time and total dose response of non-volatile UVPROMs

The total-dose radiation response and intrinsic charge loss are reported as a function of operating time in a system. Five groups of Intel and Signetics 27C256 devices were aged from one to five years through accelerated bake to simulate system use. Characterizations of the groups with five years of simulated use are presented. The device margin voltage was characterized before and after aging and after exposure to five total-dose radiation levels (1 K-5 K rads (Si)). A statistical model based upon the characterization data was developed to establish reprogramming intervals for these devices when they are used in airborne electronic systems.<
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