Analysis of the field effect in a metal-oxide-small-grain polysilicon structure-experimentation and modeling

An analysis of the field effect on small-grained (500-A) thin polysilicon film is carried out to predict the electrical behavior of metal-oxide-polysilicon structures, which depends on the grain size, the doping concentration of the polysilicon layer, and the trap densities at the grain boundaries. A one-dimensional model that is based on the exact numerical solution of Poisson's equation, which takes into account all of these parameters, is developed. Good agreement between experimental and calculated C(V) curves is found.<
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