A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements

A simple model is presented which takes into account interference effects in the common three-layer p-i-n diode epitaxial structure used for measurement of electroabsorption effects in multiple quantum well material. Antireflection coatings or surface roughening are not required to extinguish Fabry-Perot oscillations in the reflectance and transmittance spectra which improves the accuracy of the extracted absorption coefficient. Sources of error in the extracted absorption coefficient are examined. The absorption spectra of bulk GaAs and a 10-nm GaAs/10-nm AlGaAs multiple quantum well obtained using this method are compared with other measured results.<
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