HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications

A flash E/sup 2/PROM device which is programmed with a highly efficient hot-electron injection mechanism is described. This high-injection MOS (HIMOS) device combines a very high programming speed at 5-V-only operation with a low development entry cost, which renders it highly attractive for embedded memory applications. The HIMOS concept exhibits complete soft-write immunity and the possibility of overerasure without causing any problem in a memory architecture. It is shown that this device can also operate with a 3.3-V voltage supply, which is of a major importance for the next generation of submicron flash E/sup 2/PROM technologies.<
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