Delta-doping interband tunneling diode by metal-organic chemical vapor deposition

A delta-doped InGaAs-GaAs quantum well (QW) has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The full width at half maximum (FWHM) of the doping profile analyzed by capacitance-voltage measurements is less than 30 A and is comparable to those produced by molecular beam epitaxy (MBE) or chemical beam epitaxy (CBE). Two kinds of delta-doping interband tunneling diodes with band diagrams similar to those of InAs/AlSb-GaSb related interband tunneling diodes have been fabricated.<
>