A highly-efficient 7-watt 16 GHz monolithic pseudomorphic HEMT amplifier

The achievement of a record CW output power of 7 W with 4.5-dB gain and 30.8% power-added efficiency with a monolithic, single-stage, 0.25 mu m*12-mm AlGaAs-InGaAs pseudomorphic high-electron-mobility-transistor (HEMT) amplifier at 16.3 GHz is discussed. At 5-W output, the power-added efficiency is 35% with 6-dB power gain. The chip size is 3 mm*3.5 mm.<
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