A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs

The experimental characteristics of a monolithic D-band oscillator-doubler chain are reported, together with the design, monolithic integrated circuit (MMIC) implementation, and testing. The circuits were fabricated using submicron (0.1- mu m) InAlAs/InGaAs high-electron-mobility transistors (HEMTs) and had on-chip bias stabilization circuitry and an integrated E-field probe for direct radiation into the waveguide. The oscillation signal was detected over a frequency range of 130.5 GHz to 132.8 GHz with an output power of -12 dBm for designs with small-gate-periphery (45- mu m) HEMTs.<
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