High performance and highly uniform sub-quarter micron BPLDD SAGFET with reduced source to gate spacing

A BPLDD SAGFET (self-aligned gate MESFET) with reduced source-to-gate spacing has been developed for high-speed GaAs LSIs. The short channel effect is drastically suppressed by reducing source-to-gate spacing to 0.2 mu m. Even for 0.2- mu m gate, the standard deviation of V/sub th/ is as small as 34 mV over a 3-in wafer. Transconductance as high as 480 mS/mm is achieved. f/sub T/ is estimated to be 85 GHz. High-performance and highly uniform subquarter-micron BPLDD SAGFETs with reduced source-to-gate spacing are very promising for ultrahigh-speed LSIs.<
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