Low-power performance of 0.5- mu m JFET for low-cost MMIC's in personal communications

The low-power microwave performance of an enhancement-mode ion-implanted GaAs JFET is reported. A 0.5- mu m*100- mu m E-JFET with a threshold voltage of V/sub th/=0.3 V achieved a maximum DC transconductance of g/sub m/=489 mS/mm at V/sub ds/=1.5 V and I/sub ds/=18 mA. Operating at 0.5 mW of power with V/sub ds/=0.5 V and I/sub ds/=1 mA, the best device on a 3-in wafer achieved a noise figure of 0.8 dB with an associated gain of 9.6 dB measured at 4 GHz. Across a 3-in wafer the average noise figure was F/sub min/=1.2 dB and the average associated gain was G/sub a/=9.8 dB for 15 devices measured. These results demonstrate that the E-JFET is an excellent choice for low-power personal communication applications.<
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