The effect of Fowler-Nordheim tunneling current stress on mobility in n-channel MOSFETs

The electron effective mobility in n-channel MOSFETs has been investigated under Fowler-Nordheim (F-N) tunneling current stress at room temperature. With F-N current stress, mobilities become smaller than of the prestress mobilities over the whole region of inversion carrier density N/sub inv/, and the N/sub inv/-dependence of the mobility almost disappears.<
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