Driving and protecting the latest high voltage and current power MOS and IGBTs

The new smart high-voltage gate drivers, the IXBD4410 and the IXBD4411, were designed to drive and protect power MOS and insulated gate bipolar transistor (IGBT) devices and modules in a phase leg or a totem pole inverter output configuration. These gate drivers function reliably under extreme d nu /dt and di/dt noise environments, with the half bridge inverter output voltages limited only by the breakdown of the external discrete devices. The IXBD4410 provides a diagnostic fault output flag, reflecting the condition of not only the low side but the high side device in a half bridge application. The IXBD4410 family devices can be configured to detect operating overcurrents using a resistor in series with the power device source, or by using one of several desaturation sense circuits presented. If the drive current output of the IXBD4410 is not adequate, a simple circuit consisting of a pair of complementary bipolar transistors can be placed between the IXBD4410 family device and the power MOS, IGBT, or module.<
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