CW operation of corner cavity semiconductor lasers

Etched facet semiconductor lasers have been fabricated and tested under CW operating conditions. The lasers consist of stripes formed by proton implantation, a total internal reflection (TIR) corner, and an output coupling facet. Devices with a variety of output coupling geometries were fabricated. Laser threshold currents and spectral characteristics were measured. Threshold current levels of devices with several different aperture sizes are compared to those of structures with standard Fabry-Perot reflectors.<
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