Porous silicon electron-emitting source

A novel material which consists of porous silicon on silicon has been used to demonstrate high-current, low-voltage electron field emission. The porous silicon film is grown on a silicon wafer through electrochemical anodization in concentrated hydrofluoric acid. Apparently extremely sharp silicon tips are formed at the silicon/porous silicon interface which allow low field extraction of electrons from the substrate. Evidence confirming electron vacuum transport from this electron-emitting source is presented.<
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