High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO/sub 2/ films in an N/sub 2/O ambient

Sub-half-micrometer dual-gate CMOSFETs have been successfully fabricated with 6-nm-thick nitrided SiO/sub 2/ gate films formed in an N/sub 2/O ambient. Excellent subthreshold characteristics and hot-carrier reliability were achieved because of the good abilities of N/sub 2/O-nitrided SiO/sub 2/ films in both blocking boron penetration and reducing electron traps. The major advantage of this nitridation is that the process is essentially hydrogen-free. This fabrication process is promising as a key technology toward 1/4- mu m-rule CMOS LSIs.<
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