High-gain, high-speed InGaAs/InP heterojunction bipolar transistors

Reports high-quality InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition (MOCVD) utilizing a wide base structure and exhibiting behavior suggesting good alignment of the electrical and metallurgical junctions. Excellent DC and RF HBT characteristics were obtained with common-emitter DC current gains up to 1.5*10/sup 3/, small-signal current gains up to 3.9*10/sup 3/, and unity-gain cutoff frequencies up to 15 GHz. The excellent gain and speed performance of these HBTs is attributed to the exceptional quality of the MOCVD-grown material, the good control over Zn diffusion out of the base, and the existence of a doping-induced drift field in the p-type extended base.<
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