0.1 mu m MOVPE grown InAlAs/InGaAs HEMT's with above 150 GHz operation capability

State-of-the-art device performance has been demonstrated using lattice-matched InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by MOVPE (metal-organic vapor phase epitaxy). A record f/sub T/ value of 150 GHz was obtained using 0.1- mu m mushroom-gate technology. An f/sub max/ of 200 GHz has also been recorded for the devices. Care has been taken in selecting the buffer layer for good carrier confinement and low leakage. A thin InAlAs layer was used for this purpose. It is believed that MOVPE offers an excellent alternative to other growth techniques for realizing InAlAs/InGaAs HEMTs for ultra-high frequency applications.<
>