Surface passivation of InP by in-situ dry process using PH/sub 3/-plasma and Se vapor

An in-situ dry process consisting of phosphine (PH/sub 3/)-plasma and selenium (Se) vapor treatments has been demonstrated to be effective in passivating the surface of InP. A significant dependence of the barrier height on metal work function is observed for Schottky junctions formed on the passivated surface of InP, suggesting that the Fermi level pinning is weakened by this process. It is demonstrated, moreover, that the improved interface of SiN/sub x//n-InP diodes is achieved by the present process, resulting in an interface state density as low as 7.5*10/sup 10/ eV/sup -1/ cm/sup -2/.<
>