Gas source molecular beam epitaxy of GaInAs and GaInAsP strained layer quantum well lasers emitting at 1.5 mu m

The authors report on high-quality MQW (multiquantum well) lasers with compressively and tensile-strained wells grown by gas source molecular beam epitaxy (GSMBE). Photocurrent and photoluminescence experiments show narrow and intense lines for compressively strained structures and broad spectra, without excitonic lines for tensile-strained quantum wells. These observations can be explained by the properties of the band structure. The fabrication of high-performance 1.48- mu m Fabry-Perot and 1.55- mu m DFB (distributed feedback) lasers with strained quaternary QWs has been demonstrated. Buried heterostructure lasers have realized by GSMBE with LPE regrowth.<
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