Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

1.5- mu m wavelength In/sub x/Ga/sub 1-x/As/InGaAsP (x=0.7, resulting in 1.2% compressive strain and x=0.53, resulting in zero strain) multiple quantum well (MQW) structures were grown on