A high current power IC technology using trench DMOS power device

A high-current power IC (PIC) technology that combines trench DMOS power devices with CMOS control is described. In the CMOS section, both high-voltage (60 V) and low-voltage (10 V) P- and N-channel MOS transistors allow dense control as well as high-voltage operation. The trench DMOS power device has a breakdown voltage of over 60 V and specific on resistance of 80 m Omega -mm/sup 2/. Using this technology, a high side switch PIC has been demonstrated for automotive applications. The low specific R/sub on/ and the dense control capability enable the PIC to handle up to 10 A of current with a die size of 8 mm/sup 2/.<
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