A high-performance scalable submicron MOSFET for mixed analog/digital applications

A scalable submicron MOSFET with excellent analog characteristics has been designed and fabricated for integration as a 'third' transistor with conventional CMOS processes. Excellent analog device characteristics have been obtained, including a factor of 10 improvement in available gain, a factor of 100 reduction in peak substrate current, and significantly reduced hot-electron degradation. An angled implantation technique is utilized to allow easy incorporation into submicron processes with negligible impact on the conventional devices.<
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