Simulation of two-dimensional implantation profiles with a large concentration range in crystalline silicon using an advanced Monte Carlo method

Realistic two-dimensional as-implanted boron distributions in crystalline silicon are presented. The results are reliable in a concentration range extending to four orders of magnitude below the peak concentration. The dependence of lateral channeling on wafer tilt, mask edge orientation, screening oxide thickness, and implantation energy is investigated. The important role of <110> channeling is demonstrated. A novel model describing electronic stopping in <110> channeling correctly as well as several numerical methods reducing computation times are introduced.<
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