0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

Strained InGaAs/AlGaAs double-quantum-well laser diodes (LDs) with GaInP buried waveguides operating at 0.98-1.02 mu m have been developed as light sources for pumping fiber amplifiers. These LDs have a flat surface and a low-loss real index waveguide that provides high differential quantum efficiency and efficient heat dissipation. For 0.98- mu m LDs, stable operation for over 10000 h under 100 mW conditions at 50 degrees C has been achieved, and the extrapolated lifetime is estimated to be 60000 h at 50 degrees C. For 1.02- mu m LDs, a maximum light output power of 415 mW, fiber output power as high as 70 mW, and stable operation for over 2300 h at 100 mW and 50 degrees C have been obtained.<
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