The future of bipolar transistors

The bipolar power transistor technology is in permanent evolution under the pressure of two important parameters: a request from power system designers for an increase in ruggedness (SOA, RBSOA, ES/B), an improvement in switching times, a decrease in drop voltage and easy to drive products; and the automation and control of wafer processing in order to improve the quality, the electrical parameter distribution, service and cost of power semiconductors. The author discusses the latest developments on the high voltage bipolar transistor model in the vertical and the horizontal parts of the transistor structure. Raw silicon and high voltage diffusion technologies are also studied. Some improvement possibilities, or a better electrical parameter distribution are also described.<
>