The low temperature gating characteristics of thyristors

The gate threshold current of an inverter thyristor (1300 V, 420 A average) has been measured as a function of decreasing temperature between 25 and -180 degrees C. The simple two transistor thyristor model was used to calculate the temperature dependence of the minimum required gate current by examining the temperature dependencies of the two common-base alphas in the equivalent circuit. The requirements for successful gating of thyristors are examined.<
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