Observation and modelling of the gate-source capacitance peak in polysilicon TFTs

Analysis and modelling of the terminal capacitances of polysilicon TFTs are of great interest in view of the design and fabrication of digital and analog circuits. The authors present for the first time measurements of the gate-source capacitance (C/sub gs/) in a wide frequency range (20 Hz-10 kHz), and propose a new model to explain the observed behaviour.<
>