Polysilicon for bipolar technology and circuits

The properties of polysilicon emitter contacts in bipolar transistors are discussed. Self-aligned processes using single and double polysilicon layer technology such as SICOS and trench isolated bipolar technology, and the implementation of vertical pnp polysilicon emitter transistors in complementary bipolar technology are reviewed. The performances of state of the art digital ECL bipolar circuits and of bipolar SRAMs and PROMs are presented.<
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