Process and device modelling of VLSI polysilicon components

One of the universally used materials in key device components is polysilicon: used in bipolar VLSI for both emitter and contact regions of the bipolar transistor and resistor structures; and in CMOS VLSI for the gate contact and advanced isolation regions. Progress in simulation of some of these important structures using the 2D process simulator STORM and device simulator HFIELDS is presented. The polysilicon process model utilized in these simulators incorporates the influence of polysilicon materiel properties and processes on dopant and mechanical stress distributions as well as device characteristics. Examples demonstrate its application to simulation of processes and devices from current industrial VLSI technology.<
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