Electrical characteristics of aluminum-CVD diamond-silicon structures

The behavior of aluminum-CVD (chemical vapor deposited) diamond film-silicon structures has been studied as a function of the temperature of the hot filament used to prepare the diamond film. As the filament temperature increases from 2173 to 2373 K, diamond-film surface roughness and crystallite size increase, nondiamond carbon content decreases, and device behavior changes from ohmic to Schottky. The diamond-film resistivity in all cases is substantially lower than that of bulk natural diamond and decreases with increasing filament temperature, perhaps due to increased incorporation of hydrogen in the films.<
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