NMOS device characteristics in electron-beam-recrystallized SOI

Characteristics of n-channel MOSFETs fabricated in cold-cathode electron-beam-recrystallized silicon-on-oxide layers have been examined. Assorted crystallographic defects exist in the recrystallized silicon layer, ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these MOSFET transistors have characteristics approaching those fabricated in bulk silicon including approximately=828 cm/sup 2//V-s electron surface mobilities and 130 mV/decade inverse subthreshold slopes. However, many of the devices tested exhibited leakage currents up to 10/sup -6/ A/ mu m, resulting in high inverse subthreshold slopes and reduced threshold voltages. Some effects of crystal imperfections on device behavior are discussed.<
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