A model for boron short time annealing after ion implantation

A simulation model is proposed for boron diffusion in silicon. It is especially useful for analyzing the short time annealing process subsequent to ion implantation. This model takes into account nonequilibrium diffusion and reactions of point defects and defect-dopant pairs, considering their charge states, and the dopant inactivation by the introduction of a boron clustering reaction. It is assumed that the boron-interstitial-silicon pair (BI) is a dominant diffusion species that contributes to the total boron diffusion. A primary model parameter, the binding energy of BI, is determined and used to reproduce the equilibrium gaseous source diffusion data. Using a single set of reasonable parameter values, the model covers not only the equilibrium diffusion conditions, from intrinsic, but also the nonequilibrium postimplantation diffusion. Experimental boro distribution profiles can be accurately reproduced. It is shown that the time constant for the BI dissociation reaction rules the transient behavior of boron diffusion enhancement during postimplantation annealing.<
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