A high-performance lateral bipolar transistor fabricated on SIMOX

Double-diffused, lateral n-p-n bipolar transistors were fabricated in a simple CMOS-like process using SIMOX silicon-on-insulator (SOI) substrates. Excellent device characteristics were achieved, with peak h/sub FE/=120, BV/sub CEO/=10 V, and peak f/sub t/=4.5 GHz. The f/sub t/ versus BV/sub CEO/ trade-off was studied as a function of n/sup -/ collector width. f/sub t/>25 GHz is predicted for this structure with an improved device layout and optimized basewidth. This process may be easily extended in order to fabricate complementary BJTs in a C-BiCMOS thin-film SOI technology.<
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