Radiation-induced changes in floating-body phenomena in SOI MOSFETs

An analytical model and experimental results are proposed to account for the floating body effects in silicon-on-insulator (SOI) MOSFETs. It is shown both theoretically and experimentally that an SOI MOSFET may exhibit simultaneously a negative conductance and a negative transconductance. The evolution of these effects under an X-ray exposure is studied and described in detail.<
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