Characterization of radiation effects on trench-isolated bipolar analog microcircuit technology

Radiation effects on trench-isolated bipolar analog microcircuits have been characterized through measurement of neutron damage, long-term ionizing radiation damage, transient photoresponse and pulsed radiation-induced latchup. The characterization was done to provide basic information on the hardness of the technology for potential system applications. The principal means of evaluation was through characterization of process-control and custom test chips. Results of the test chip characterization were compared to radiation effects characterization of basic microcircuits of identical process technologies. The goal of the characterization was to determine if there were any surprises in the radiation susceptibility.<
>