Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique

Low-loss extended cavity lasers fabricated in GaAs/AlGaAs quantum-well material busing silica cap disordering and strontium fluoride selective area masking are described. Losses as low as 17 dBcm/sup -1/ were measured in the passive slab waveguide sections. Lasing action was achieved in devices with passive sections of up to 2 mm in length.<
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