Initial hydrogen ion profiles during interface trap formation in MOS devices

Detailed predictions based on the H/sup +/ transport model for interface trap creation require knowledge of the initial (postirradiation) spatial distributions of H/sup +/ ions through the oxide. Proposed H/sup +/ distributions from the literature are evaluated by comparison of experimental data with calculations based on the model. It is found that the experimental data are consistent with creation of radiation-induced H/sup +/ ions both within the bulk of the oxide and preferentially in the vicinity of the SiO/sub 2/-Si interface (but not preferentially in the vicinity of the SiO/sub 2/-gate interface). The balance between bulk and near-interface H/sup +/ generation appears dependent on the device fabrication process.<
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