Inverter performance of deep-submicrometer MOSFETs

Switching delay measurements are reported for self-aligned, almost fully scaled, liquid-nitrogen-temperature operation NMOS inverters with deep-submicrometer gate lengths. The shortest delay per stage of 13.1 ps was measured in 0.1- mu m gate-length circuits. Circuit simulations based on the measured device characteristics show that still shorter delay times can be reached with such a technology.<
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