Amorphous silicon as a resist material

Lithographic properties of amorphous silicon films exposed to glow-discharge hydrogen plasma and ion beams have been investigated. The rate of film etching by a CF/sub 4/ plasma is lowered by exposure, giving rise to a negative resist behavior of the material. The sensitivity and contrast are approximately 10/sup 18/ ions/cm/sup 2/ and 1.1, respectively. The effect of exposure time on etching characteristics was also studied.<
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