MOVPE growth of InGaAs on InP using tertiarybutylarsine

The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<
>