InP-based nonlinearly-optimized transconductance field-effect transistor (NOTFET)

A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<
>