Integrated amorphous silicon photoconductive type image sensor

The authors report a study on an integrated amorphous silicon photoconductive-type image sensor. The photoconductive-type sensor has the advantage of a high photocurrent. All the elements in an integrated sensor circuit, including sensor, storage capacitor, switch transistor, and matrix wiring, can be fabricated within one deposition process. A novel sandwich structure with a low level-phosphorous-doped layer is proposed to enhance the photoconductivity. A high photoconductivity of 5*10/sup -5/ S cm/sup -1/ has been achieved, with a photosensitivity of 5*10/sup 4/. The key to the sensor is the SiN/a-Si:H interface, which can be controlled by a metal gate underneath the SiN layer. The thin-film transistor with low-level doping in the channel material has an on current of 1 mu A and an on/of ratio of 10/sup 4/.<
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