A native-oxide-free process for 4 nm capacitor dielectrics

An integrated process, composed of a vapor HF processor, a wafer carrier box with N/sub 2/ flow, and an SiN LPCVD system with N/sub 2/ flow load-lock, for realizing native-oxide free SiN formation is discussed. It has been found that an ON film having the equivalent oxide thickness of 4 nm can be obtained and further improvement may be possible. Therefore, it is expected to be a promising technology for the 64-Mb DRAM and beyond.<
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