Preparation of PbTiO/sub 3/ thin films by photo-MOCVD

PbTiO/sub 3/ thin films have been grown successfully by photo-metalorganic chemical vapor deposition (MOCVD) at a temperature range of 400-700 degrees C, using tetraethyl lead (Pb(C/sub 2/H/sub 5/)/sub 4/), titanium tetraisopropoxide (Ti(i-OC/sub 3/H/sub 7/)/sub 4/) and oxygen as source materials. The growth rate and structural nature of PbTiO/sub 3/ films were affected by the substrate temperature, gas flow rate and photo irradiation. Only when films were grown by photo-MOCVD were PbTiO/sub 3/ films with a single perovskite structure obtained at substrate temperatures higher than 600 degrees C and highly