Partitioned-charge-based BJT model using transient charge control relations for arbitrary doping and bias conditions

Recent transient charge control (TCC) relations such as the TICC or more general GTCC are applied to accurate calculation of base charge partitioning for arbitrary doping profiles and bias conditions. A large-signal BJT circuit model is developed using this approach; both DC and complete first-order AC characteristics are derived from static device simulations.<
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