A high performance V-band monolithic FET transmit-receive switch

A monolithic V-band GaAs FET transmit-receive switch is described. The insertion loss for the switch-on path is less than 1.5 dB across a 2-GHz bandwidth (59 to 61 GHz) and is less than 3.2 dB across an 8-GHz bandwidth (56 to 64 GHz). The isolation during switch-off is greater than 25 dB across a 2-GHz bandwidth (59 to 61 GHz) and is greater than 23 dB across an 8-GHz bandwidth (56 to 64 GHz). The monolithic FET switch circuit demonstrated a switching speed of less than 1 ns and radio-frequency power handling capability in excess of 450 mW.<
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