High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers

The authors have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. They fabricated lasers of 8-15 and 20- mu m diameters. The 8- mu m-diameter devices exhibited CW operation up to 140 degrees C with little change in threshold current from 15 degrees C to 100 degrees C, and the 20- mu m-diameter devices showed CW output power of 11 mW at 25 degrees C without significant heat sinking.<
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